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Simulation of charge-trapping in nano-scale mosfets in the presence of random-dopants-induced variability / Muhammad Faiz Bukhori.

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Publication details: Glascow : University of Glascow, 2011Description: xix, 164 p. : ill. ; 30 cmSubject(s):

Dissertation note: Thesis (Ph. D.) - University of Glascow, 2011

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Item type	Current library	Home library	Collection	Call number	Materials specified	Copy number	Status	Date due	Barcode
TERHAD	PERPUSTAKAAN LINGKUNGAN KEDUA	PERPUSTAKAAN LINGKUNGAN KEDUA TESIS-P. LINGKUNGAN KEDUA	-	TK7871.95.M845 2011 tesis 3 (Browse shelf(Opens below))		1	Available		00002064649

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Previous	TK7871.95.K37 1996 3tesis Study of tunneling and breakdown mechanisms of gate oxide in MOSFET	TK7871.95.K493 2006 tesis 3 Kajian tentang ciri-ciri elektrik transistor elektron kelincahan tinggi pseudomorfik (PHEMT) dalam regim nano /	TK7871.95.M745 2018 3 tesis Design and modeling of non-classical silicon-on-insulator metal-semiconductor field effect transistors /	TK7871.95.M845 2011 tesis 3 Simulation of charge-trapping in nano-scale mosfets in the presence of random-dopants-induced variability /	TK7871.95.W3518 2011 3 tesis Ion selectivity studies using supervised neural network for ion-sensitive field-effect transistor sensor /	TK7871.95.W3527 2008 3tesis Mechanical stress effect on mosfets of 130 nm technology /	TK7871.96.B55S535 2016 3 tesis Enhanced control algorithm for distribution static compensator using phase space technique /	Next

Thesis (Ph. D.) - University of Glascow, 2011

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