Simulation of charge-trapping in nano-scale mosfets in the presence of random-dopants-induced variability /

Muhammad Faiz Bukhori.

Simulation of charge-trapping in nano-scale mosfets in the presence of random-dopants-induced variability / Muhammad Faiz Bukhori. - Glascow : University of Glascow, 2011 - xix, 164 p. : ill. ; 30 cm.

Thesis (Ph. D.) - University of Glascow, 2011

Hadiah


Metal oxide semiconductor field-effect transistors.
Nanoelectronics.
Semiconductors.

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