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1.
Hot-electron effects in MOSFET's (microform) by Ping Keung Ko by
Publication details: Ann Arbor, Mich. University Microfilms International 1983
Dissertation note: Thesis (Ph.D.)-University of California, 1982
Availability: Items available for loan: PERPUSTAKAAN TUN SERI LANANG (1)Call number: TK7871.95.K6 1983 4mikrofis.

2.
A punchthrough current model for short-channel MOSFETs by James D. Kendall by
Publication details: Ottawa Carleton University 1983
Dissertation note: Thesis (Master of Engineering) - Carleton University, 1983
Availability: Items available for loan: PERPUSTAKAAN TUN SERI LANANG (1)Call number: TK7871.95.K46 1983 4 [00008051976].

3.
Small-geometry mos transistors [microform] : physics and modeling of surface and buried channel mosfets / Thao Ngoc Nguyen by
Publication details: Ann Arbor, Mich. : University Microfilms International, 1985
Dissertation note: Thesis (Ph.D.) - Stanford University, 1984
Availability: Items available for loan: PERPUSTAKAAN TUN SERI LANANG (1)Call number: TK7871.95.N58 1985 4mikrofis.

4.
Study of tunneling and breakdown mechanisms of gate oxide in MOSFET Mohammed Fakhrul Karim by
Publication details: Universiti Kebangsaan Malaysia, Bangi Faculty of Engineering 1996
Dissertation note: Thesis (M.Sc.) - Universiti Kebangsaan Malaysia, 1996
Availability: Items available for loan: PERPUSTAKAAN LINGKUNGAN KEDUA (1)Call number: TK7871.95.K37 1996 3tesis.

5.
Transistors : fundamentals for the integrated-circuit engineer / R.M. Warner, Jr., B.L. Grung. by
Publication details: New York : Wiley, 1983
Availability: Items available for loan: PERPUSTAKAAN LINGKUNGAN KEDUA (1)Call number: TK7871.96.B55W37 3. PERPUSTAKAAN TUN SERI LANANG (1)Call number: TK7871.96.B55W37.

6.
MOSFET : theory and design / R.M. Warner, Jr., B.L. Grung by
Publication details: New York : Oxford University Press, 1999
Availability: Items available for loan: PERPUSTAKAAN LINGKUNGAN KEDUA (1)Call number: TK7871.95.W353.

7.
Study of tunneling and breakdown mechanisms of gate oxide in MOSFET [microform] / Mohammed Fakhrul Karim by
Publication details: Bangi : Perpustakaan Tun Seri Lanang, Universiti Kebangsaan Malaysia, 1997
Dissertation note: Thesis (M.Sc.) - Universiti Kebangsaan Malaysia, 1996
Availability: Items available for loan: PERPUSTAKAAN TUN SERI LANANG (1)Call number: TK7871.95.K37 1997 4mikrofis.

8.
Semiconductor devices / Kanaan Kano by
Publication details: Upper Saddle River, N.J. : Prentice Hall, 1998
Availability: Items available for loan: PERPUSTAKAAN LINGKUNGAN KEDUA (1)Call number: TK7871.85.K36 3.

9.
A punchthrough current model for short-channel MOSFETs [microform] / by James D. Kendall by
Publication details: Bangi : Perpustakaan Tun Seri Lanang, 2005
Dissertation note: Thesis (Master of Engineering) - Carleton University, 1983
Availability: Items available for loan: PERPUSTAKAAN TUN SERI LANANG (1)Call number: mikrofilem tesis TK7871.95.K46 2005.

10.
CMOS circuit design, layout, and simulation / R. Jacob Baker by Series: IEEE Press series on microelectronic systems
Edition: 2nd ed.
Publication details: New York : IEEE, 2005
Availability: Items available for loan: PERPUSTAKAAN LINGKUNGAN KEDUA (1)Call number: TK7871.99.M44B354 2005 3. ZZ (1)Call number: TK7871.99.M44.B354 2005 3.

11.
Nanoscale transistors : device physics, modeling and simulation / Mark S. Lundstrom, Jing Guo by
Publication details: New York : Springer, 2006
Availability: Items available for loan: PERPUSTAKAAN LINGKUNGAN KEDUA (1)Call number: T174.7.L863 3.

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Power Semiconductors / Stefan Linder by Series: Engineering sciences. Electrical engineering
Publication details: New York : CRC Press, 2006
Availability: Items available for loan: PERPUSTAKAAN LINGKUNGAN KEDUA (1)Call number: TK7871.85.L566 3.

16.
Mechanical stress effect on mosfets of 130 nm technology / Wan Rosmaria binti Wan Ahmad by
Publication details: Bangi : Institut Kejuruteraan Mikro dan Nanoelektrik, Universiti Kebangsaan Malaysia, 2008
Dissertation note: Thesis (M.Sc) - Universiti Kebangsaan Malaysia, 2008
Availability: Items available for loan: PERPUSTAKAAN LINGKUNGAN KEDUA (1)Call number: TK7871.95.W3527 2008 3tesis.

17.
FinFETs and Other Multi-Gate Transistors [electronic resource] / edited by Jean-Pierre Colinge. by
Publication details: Boston, MA : Springer Science+Business Media, LLC, 2008
In: Springer e-books
Online resources:
Availability: No items available.

18.
Two-dimensional analytical modelling of the short-channel mosfet / by James D. Kendall by
Publication details: Canada : Carleton University, 1987
Dissertation note: Thesis (Ph.D) - Carleton University, 1987
Availability: Items available for loan: PERPUSTAKAAN TUN SERI LANANG (1)Call number: TK7871.95.K466 1987 [00008051977].

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Strained-Si heterostructure field effect devices [electronic resource] / C.K. Maiti, S. Chattopadhyay, L.K. Bera by Series: Series in materials science and engineering
Publication details: New York : Taylor & Francis, c2007
Other title:
  • Strained silicon heterostructure field effect devices
Availability: No items available.

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