Simulation of charge-trapping in nano-scale mosfets in the presence of random-dopants-induced variability /
Muhammad Faiz Bukhori.
- Glascow : University of Glascow, 2011
- xix, 164 p. : ill. ; 30 cm.
Thesis (Ph. D.) - University of Glascow, 2011
Hadiah
Metal oxide semiconductor field-effect transistors. Nanoelectronics. Semiconductors.