TY  - BOOK
AU  - Karim,Mohammed Fakhrul
TI  - Study of tunneling and breakdown mechanisms of gate oxide in MOSFET
PY  - 1996///
CY  - Universiti Kebangsaan Malaysia, Bangi
PB  - Faculty of Engineering
KW  - Metal oxide semiconductor field
KW  - effect transistors
N1  - Thesis (M.Sc.) - Universiti Kebangsaan Malaysia, 1996; References : p. 118-123
ER  -