Karim, Mohammed Fakhrul <br/><br/>
Study of tunneling and breakdown mechanisms of gate oxide in MOSFET 
Mohammed Fakhrul Karim 
 - Universiti Kebangsaan Malaysia, Bangi  Faculty of Engineering  1996 
 - 129 p. : ill. ; 30 cm. 
<br/><br/>Thesis (M.Sc.) - Universiti Kebangsaan Malaysia, 1996 
<br/><br/>References : p. 118-123 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Metal oxide semiconductor field--effect transistors