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Kajian tentang ciri-ciri elektrik transistor elektron kelincahan tinggi pseudomorfik (PHEMT) dalam regim nano /

Khairul Nisha Mohd. Kharuddin

Kajian tentang ciri-ciri elektrik transistor elektron kelincahan tinggi pseudomorfik (PHEMT) dalam regim nano / Khairul Nisha bt. Mohd. Kharuddin - Bangi : Fakulti Kejuruteraan, Universiti Kebangsaan Malaysia, 2006 - xv, 139 p. : charts. ; 30 cm.

Tesis (Sarjana Sains) - Universiti Kebangsaan Malaysia, 2006

Rujukan : p. [121]-128

Subjects--Corporate Names:
Universiti Kebangsaan Malaysia--Dissertations

Subjects--Topical Terms:
Dissertations, Academic--Malaysia
Field-effect transistors
Heterojunctions
Nanostructures

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Kajian tentang ciri-ciri elektrik transistor elektron kelincahan tinggi pseudomorfik (PHEMT) dalam regim nano /

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