Study of tunneling and breakdown mechanisms of gate oxide in MOSFET
Karim, Mohammed Fakhrul
Study of tunneling and breakdown mechanisms of gate oxide in MOSFET Mohammed Fakhrul Karim - Universiti Kebangsaan Malaysia, Bangi Faculty of Engineering 1996 - 129 p. : ill. ; 30 cm.
Thesis (M.Sc.) - Universiti Kebangsaan Malaysia, 1996
References : p. 118-123
Metal oxide semiconductor field--effect transistors
Study of tunneling and breakdown mechanisms of gate oxide in MOSFET Mohammed Fakhrul Karim - Universiti Kebangsaan Malaysia, Bangi Faculty of Engineering 1996 - 129 p. : ill. ; 30 cm.
Thesis (M.Sc.) - Universiti Kebangsaan Malaysia, 1996
References : p. 118-123
Metal oxide semiconductor field--effect transistors